Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region

Nonuniform threshold voltage profile in a-Si:H thin film transistor stressed under both gate and drain biases

In this paper we show that an a-Si:H thin film transistor TFT stressed with bias temperature stress BTS under both gate bias and drain bias produces a nonuniform threshold voltage profile which can be obtained from the quasi-Fermi potential profile and the threshold voltage Vt -shift data of BTS under the gate bias only. The transfer and output characteristics calculated with this nonuniform Vt...

Electrostatically Doped Heterojunction TFET with Enhanced Driving Capabilities for Low Power Applications

This paper projects the enhanced drive current of a ntype electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET device utilizes the electrostatic doping in order to create the source/drain region on an intrinsic silicon nanowire that also felicitates dynamic re-configurabil...

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

MoS2 Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

We study the channel width scaling of back-gated MoS2 metal–oxide–semiconductor field-effect transistors from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT ) shi...

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics